ZVNL120GTC【PDF 1/3 页】MOSFET N-CHAN 200V SOT223

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SOT223 N-CHANNEL ENHANCEMENT MODE

LOW THRESHOLD VERTICAL DMOS FET

ZVNL120G

ISSUE 2 - JANUARY 1996

FEATURES

* V DS - 200V

* R DS(ON) - 10 ?

PARTMARKING DETAIL - ZVNL120

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Drain-Source Voltage

Continuous Drain Current at T amb =25°C

Pulsed Drain Current

Gate-Source Voltage

Power Dissipation at T amb =25°C

Operating and Storage Temperature Range

SYMBOL

V DS

I D

I DM

V GS

P tot

T j :T stg

VALUE

200

320

± 20

-55 to +150

UNIT

°C

ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN.

MAX. UNIT CONDITIONS.

Drain-Source Breakdown

BV DSS

200

I D =1mA, V GS =0V

Voltage

Gate-Source Threshold Voltage V GS(th)

0.5

1.5

I D =1mA, V DS = V GS

Gate-Body Leakage

Zero Gate Voltage Drain

Current

I GSS

I DSS

100

μ A

V GS = ± 20V, V DS =0V

V DS =200V, V GS =0V

V DS =160V, V GS =0V,

T=125°C (2)

On-State Drain Current(1)

Static Drain-Source On-State

Resistance (1)

I D(on)

R DS(on)

500

V DS =25V, V GS =5V

V GS =5V, I D =250mA

V GS =3V, I D =125mA

Forward Transconductance(1)(2) g fs

200

V DS =25V, I D =250mA

Input Capacitance (2)

C iss

Common Source Output

C oss

V DS =25V, V GS =0V, f=1MHz

Capacitance (2)

Reverse Transfer Capacitance (2) C rss

Turn-On Delay Time (2)(3)

t d(on)

Rise Time (2)(3)

Turn-Off Delay Time (2)(3)

Fall Time (2)(3)

t r

t d(off)

t f

V DD ≈ 25V, I D =250mA

(1) Measured under pulsed conditions. Width=300 μ s. Duty cycle ≤ 2% (2) Sample test.

(3) Switching times measured with 50 ? source impedance and <5ns rise time on a pulse generator

3 - 420

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